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Design and evaluation of an analytical model for one-dimensional ballistic Schottky barrier GAA carbon nanotube FETs including BTBT effects
A. Matter, Fatma Eslam S., El-Mokadem F. A Hamed, Hesham A. Afifi, Ahmed
A. Matter, Fatma
Eslam S., El-Mokadem
F. A Hamed, Hesham
A. Afifi, Ahmed
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2025-06-13
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Abstract
The relentless pursuit of smaller, faster, and more efficient transistors has driven the evolution of semiconductor technology. As traditional silicon-based MOSFETs approach their physical limits, carbon nanotube field-effect transistors (CNFETs) emerge as a promising alternative, particularly for applications below the 7 nm node. This article delves into the design and evaluation of an analytical model for one-dimensional ballistic Schottky barrier gate-all-around (GAA) CNFETs, with a particular focus on band-to-band tunneling (BTBT) effects. The Schottky barrier effect, a critical factor in device performance, is thoroughly examined, along with the superior characteristics of the GAA structure. The proposed model incorporates influential features such as ballistic transport, transmission through Schottky barrier contacts, and BTBT, offering a more accurate representation of device behavior. The study provides a detailed comparison with experimental data, demonstrating the model's accuracy in predicting key performance metrics such as on-current, drain-induced barrier lowering (DIBL), and threshold voltage. With a computation time of approximately 1.39 seconds, the model offers a significant advantage in terms of efficiency. The article also discusses potential avenues for future research, including the integration of multiple reflections between Schottky barriers and the consideration of multi-CNT configurations. This comprehensive analysis makes it a must-read for anyone interested in the future of nanoscale transistor technology.
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CC0 1.0 Universal