First Demonstration of Orange-yellow Light Emitter Devices in InGaP/ InAlGaP Laser Structure Using a Strain-induced Quantum Well Intermixing Technique

Abstract

In this paper, a novel strain-induced quantum well intermixing (QWI) technique is employed on an InGaP/InAlGaP material system to promote interdiffusion via application of a thick-dielectric encapsulant layer, in conjunction with cycle annealing at elevated temperature. With this technique, we demonstrate the first yellow superluminescent (SLD) at a wavelength of 583nm with a total two-facet output power of ~4.5mW—the highest optical power ever reported at this wavelength in this material system. The demonstration of the yellow SLD without complicated multiquantum barriers to suppress the carrier overflow will have a great impact in realizing the yellow laser diode that cannot be grown with conventional methods.